Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer
arXiv:0901.3210 · doi:10.1088/1367-2630/10/7/073001
Abstract
We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.
5 pages, 7 figures