$L$-valley electron $g$ factor in bulk GaAs and AlAs

Abstract

We study the Landé $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Landé factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.

4 pages, 1 figure, To be published in J. App. Phys. 104, 2008