Carrier relaxation in Si/SiO$_2$ quantum dots
arXiv:0805.3451 · doi:10.1016/j.physe.2008.08.053
Abstract
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008