Giant Carrier Mobility in Single Crystals of FeSb2
arXiv:0804.3625 · doi:10.1063/1.2926662
Abstract
We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.
5 pages, 3 figures. Applied Physics Letters (in press)