Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

5 pages, 5 figures