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paper

Pressure-induced metal-insulator transition in MgV_2O_4

arXiv:0707.3798 · doi:10.1016/j.physb.2007.10.208

Abstract

On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal-insulator transition takes place at high pressure (approximately 6 GPa) in MgV_2O_4.

2 pages, 3 figures, accepted in Physica B (Strongly Correlated Electron Systems '07)