Magnetically Induced Field Effect in Carbon Nanotube Devices
arXiv:0705.1493 · doi:10.1007/978-1-4020-8425-6_27
Abstract
Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.
5 pages, 4 figures, 1 table