Substrate temperature changes during MBE growth of GaMnAs
arXiv:0704.2485 · doi:10.1063/1.2800798
Abstract
Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation damping are discussed.
5 pages, 5 figures Submitted to Journal of Applied Physics