papers
Publications (12)
cond-mat.mtrl-sci2010
Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena, John Simon, Albert +12
cond-mat.mtrl-sci2017
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
SM Islam, Kevin Lee, Jai Verma +5
cond-mat.mtrl-sci2014
Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
William A. O'Brien, Meng Qi, Lifan Yan +5
cond-mat.mes-hall2016
Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam +5
cond-mat.mes-hall2012
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang, Maja Remskar, Rusen Yan +9
cond-mat.mtrl-sci2013
Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects
Meng Qi, Chad A. Stephenson, Vladimir Protasenko +4
cond-mat.mtrl-sci2015
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Rusen Yan, Sara Fathipour, Yimo Han +8
cond-mat.mes-hall2017
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
cond-mat.mes-hall2013
High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11
cond-mat.mtrl-sci2015
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
cond-mat.mtrl-sci2015
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Priti Gupta, A. A. Rahman, Shruti Subramanian +10
cond-mat.stat-mech2006
Power Law Blinking Quantum Dots: Stochastic and Physical Models
Gennady Margolin, Vladimir Protasenko, Masaru Kuno +1