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papers

Publications (14)

cond-mat.other2007

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

H. Cazin d'Honincthun, S. Galdin-Retailleau, A. Bournel +2

cond-mat.mes-hall2003

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

F. Monsef, P. Dollfus, S. Galdin-Retailleau +2

cond-mat.mes-hall2018

Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

B. Davier, J. Larroque, P. Dollfus +4

cond-mat.other2005

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau

cond-mat.mes-hall2014

Enhanced thermoelectric figure of merit in vertical graphene junctions

V. Hung Nguyen, M. Chung Nguyen, Huy-Viet Nguyen +2

cond-mat.other2007

Monte Carlo study of apparent mobility reduction in nano-MOSFETs

K. Huet, J. Saint-Martin, A. Bournel +4

cond-mat.mes-hall2011

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

V. Hung Nguyen, A. Bournel, P. Dollfus

cond-mat.mes-hall2007

Scattering approach to current and noise in interacting mesoscopic systems

V. Nam Do, P. Dollfus, V. L. Nguyen

cond-mat.mes-hall2010

Electron transport properties in high-purity Ge down to cryogenic temperatures

V. Aubry-Fortuna, P. Dollfus

cond-mat.other2005

Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation

J. Saint-Martin, A. Bournel, P. Dollfus

cond-mat.mes-hall2004

On the ballistic transport in nanometer-scaled double-gate MOSFET

J. Saint Martin, A. Bournel, P. Dollfus

cond-mat.mes-hall2009

Controllable spin-dependent transport in armchair graphene nanoribbon structures

V. Hung Nguyen, V. Nam Do, A. Bournel +2

cond-mat.mes-hall2004

Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation

P. Dollfus, A. Bournel, S. Galdin +2

cond-mat.mtrl-sci2008

A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures

M. -A. Jaud, S. Barraud, P. Dollfus +1