Publications (36)
The Larmor clock and anomalous spin dephasing in silicon
Biqin Huang, Ian Appelbaum
35% magnetocurrent with spin transport through Si
Biqin Huang, Lai Zhao, Douwe J. Monsma +1
Kramers' revenge
Pengke Li, Ian Appelbaum
Field-induced negative differential spin lifetime in silicon
Jing Li, Lan Qing, Hanan Dery +1
Detecting Majoranas in 1D wires by charge sensing
Gilad Ben-Shach, Arbel Haim, Ian Appelbaum +3
Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum
Modeling spin transport with current-sensing spin detectors
Jing Li, Ian Appelbaum
Ultra-bright source of polarization-entangled photons
Paul G. Kwiat, Edo Waks, Andrew G. White +2
Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
Holly N. Tinkey, Pengke Li, Ian Appelbaum
Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
Yuan Lu, Jing Li, Ian Appelbaum
Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
Ian Appelbaum, Holly N. Tinkey, Pengke Li
Oblique Hanle Effect in Semiconductor Spin Transport Devices
Jing Li, Biqin Huang, Ian Appelbaum
Introduction to Spin-Polarized Ballistic Hot Electron Injection and Detection in Silicon
Ian Appelbaum
Proposal for a Topological Plasmon Spin Rectifier
Ian Appelbaum, H. D. Drew, M. S. Fuhrer
Anisotropy-driven spin relaxation in germanium
Pengke Li, Jing Li, Lan Qing +2
Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers
Pengke Li, Ian Appelbaum
Spin polarized electron transport near the Si/SiO2 interface
Hyuk-Jae Jang, Ian Appelbaum
Robust zero-energy bound states in a helical lattice
Pengke Li, Jay D. Sau, Ian Appelbaum
Experimental realization of a silicon spin field-effect transistor
Biqin Huang, Douwe J. Monsma, Ian Appelbaum
Spin relaxation via exchange with donor impurity-bound electrons
Lan Qing, Jing Li, Ian Appelbaum +1
Transit-Time Spin Field-Effect-Transistor
Ian Appelbaum, Douwe Monsma
Interpreting current-induced spin polarization in topological insulator surface states
Pengke Li, Ian Appelbaum
Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
Biqin Huang, Ian Appelbaum
Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device
Ian Appelbaum
Electronic measurement and control of spin transport in Silicon
Ian Appelbaum, Biqin Huang, Douwe Monsma
Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
Jing Li, Ian Appelbaum
Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'
Ian Appelbaum, Pengke Li
Spin polarization control in a 2-dimensional semiconductor
Ian Appelbaum, Pengke Li
Reverse Schottky-Asymmetry Spin Current Detectors
Yuan Lu, Ian Appelbaum
Cross-Polarized Microwave Surface-State Anti-Resonance
Ian Appelbaum
Intrinsic two-dimensional state on the pristine surface of tellurium
Pengke Li, Ian Appelbaum
Electrons and holes in phosphorene
Pengke Li, Ian Appelbaum
Non-ohmic spin transport in n-type doped silicon
Hyuk-Jae Jang, Jing Xu, Jing Li +2
Coherent spin transport through a 350-micron-thick Silicon wafer
Biqin Huang, Douwe J. Monsma, Ian Appelbaum
Excitons without effective mass: biased bilayer graphene
Pengke Li, Ian Appelbaum
Spin lifetime in silicon in the presence of parasitic electronic effects
Biqin Huang, Douwe J. Monsma, Ian Appelbaum