papers
Publications (4)
cond-mat.mes-hall2011
Graphene field-effect transistors based on boron nitride gate dielectrics
I. Meric, C. R. Dean, A. F. Young +3
cond-mat.mes-hall2011
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I. Meric, C. R. Dean, S. -J. Han +4
cond-mat.mes-hall2012
Electronic compressibility of layer polarized bilayer graphene
A. F. Young, C. R. Dean, I. Meric +7
cond-mat.mes-hall2010
Boron nitride substrates for high-quality graphene electronics
C. R. Dean, A. F. Young, I. Meric +8