Publications (121)
Multimillion Atom Simulations with NEMO 3-D
Shaikh Ahmed, Neerav Kharche, Rajib Rahman +13
NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law
Robert Andrawis, Jose David Bermeo, James Charles +12
A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman +2
Silicon Quantum Electronics
Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello +6
Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Rifat Ferdous, Kok W. Chan, Menno Veldhorst +6
Valley Degeneracies in (111) Silicon Quantum Wells
Neerav Kharche, Seongmin Kim, Timothy B. Boykin +1
Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
Muhammad Usman, Tomoya Inoue, Yukihiro Harda +2
Impact of Dimensionality on PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Characterizing Si:P quantum dot qubits with spin resonance techniques
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Abhijeet Paul, Giuseppe C. Tettamanzi, Sunhee Lee +5
Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen +6
Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
Fahd A. Mohiyaddin, Rachpon Kalra, Arne Laucht +3
Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck +4
Orbital Stark effect and quantum confinement transition of donors in silicon
Rajib Rahman, G. P. Lansbergen, Seung H. Park +4
Explicit screening full band quantum transport model for semiconductor nanodevices
Yuanchen Chu, Prasad Sarangapani, James Charles +2
P-Type Tunnel FETs With Triple Heterojunctions
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1
Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces
Xueping Jiang, Neerav Kharche, Paul Kohl +5
In-surface confinement of topological insulator nanowire surface states
Fan W. Chen, Luis A. Jauregui, Yaohua Tan +4
Switching Mechanism and the Scalability of vertical-TFETs
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2
Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2
Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network
Daniel Valencia, Evan Wilson, Zhengping Jiang +3
Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor
Gengchiau Liang, Jie Xiang, Neerav Kharche +3
Brillouin zone unfolding method for effective phonon spectra
Timothy B. Boykin, Arvind Ajoy, Hesameddin Ilatikhameneh +2
Simulations of Nanowire Transistors: Atomistic vs. Effective Mass Models
Neophytos Neophytou, Abhijeet Paul, Mark S. Lundstrom +1
Conduction band tight-binding description for silicon applied to phosphorous donors
A. S. Martins, Timothy B. Boykin, Gerhard Klimeck +1
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck +1
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim +2
Performance Evaluation of Ballistic Silicon Nanowire Transistors with Atomic-basis Dispersion Relations
Jing Wang, Anisur Rahman, Avik Ghosh +2
Transferable tight binding model for strained group IV and III-V heterostructures
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2
Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
Seungwon Lee, Olga L. Lazarenkova, Fabiano Oyafuso +2
Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)
Muhammad Usman, Susannah Heck, Edmund Clarke +4
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +4
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
Atomistic approach to alloy scattering in $Si_{1-x}Ge_{x}$
Saumitra R Mehrotra, Abhijeet Paul, Gerhard Klimeck
Anisotropic strain in SmSe and SmTe: implications for electronic transport
Marcelo A. Kuroda, Zhengping Jiang, Michael Povolotskyi +3
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties
Muhammad Usman, Vittorianna Tasco, Maria Teresa Todaro +4
Bandstructure Effects in Silicon Nanowire Hole Transport
Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck
Can Tunnel Transistors Scale Below 10nm?
Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman
Strain effects on the thermal properties of ultra-scaled Si nanowires
Abhijeet Paul, Gerhard Klimeck
Silicon quantum processor with robust long-distance qubit couplings
Guilherme Tosi, Fahd A. Mohiyaddin, Vivien Schmitt +4
nanoHUB.org: Experiences and Challenges in Software Sustainability for a Large Scientific Community
Lynn Zentner, Michael Zentner, Victoria Farnsworth +3
Bulk and sub-surface donor bound excitons in silicon under electric fields
Rajib Rahman, Jan Verduijn, Yu Wang +4
Distributed NEGF Algorithms for the Simulation of Nanoelectronic Devices with Scattering
Stephen Cauley, Mathieu Luisier, Venkataramanan Balakrishnan +2
An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach
Abhijeet Paul, Shuaib Salamat, Changwook Jeong +2
On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias
Neophytos Neophytou, Sung Geun Kim, Gerhard Klimeck +1
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi +5
Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
SungGeun Kim, Mathieu Luisier, Timothy B. Boykin +1
Control of interlayer delocalization in 2H transition metal dichalcogenides
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14
Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
Jarryd J. Pla, Fahd A. Mohiyaddin, Kuan Y. Tan +6
Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data
Muhammad Usman, Hoon Ryu, Insoo Woo +2
Sensitivity Challenge of Steep Transistors
Hesameddin Ilatikhameneh, Tarek Ameen, ChinYi Chen +2
Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
Jun Z. Huang, Lining Zhang, Pengyu Long +2
Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers
Sunhee Lee, Hoon Ryu, Zhengping Jiang +1
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
Valley splitting in strained silicon quantum wells
Timothy B. Boykin, Gerhard Klimeck, M. A. Eriksson +5
Engineering inter-qubit exchange coupling between donor bound electrons in silicon
Yu E. Wang, Archana Tankasala, Lloyd C. L. Hollenberg +3
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
Scaling Theory of Electrically Doped 2D Transistors
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
Two-electron states of a group V donor in silicon from atomistic full configuration interaction
Archana Tankasala, Joseph Salfi, Juanita Bocquel +7
Final Report on ECCS/NSF Workshop on Quantum, Molecular and High Performance Modeling and Simulation for Devices and Systems (QMHP)
Jonathan P. Dowling, Gerhard Klimeck, Paul Werbos
Transferable tight binding model for strained group IV and III-V materials and heterostructures
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2
On the Validity of the Parabolic Effective-Mass Approximation for the Current-Voltage Calculation of Silicon Nanowire Transistors
Jing Wang, Anisur Rahman, Avik Ghosh +2
From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
Hesameddin Ilatikhameneh, Ramon B. Salazar, Gerhard Klimeck +2
Atomistic study of electronic structure of PbSe nanowires
Abhijeet Paul, Gerhard Klimeck
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
Shweta Deora, Abhijeet Paul, R. Bijesh +5
Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution
Yaohua P. Tan, Michael Povolotsky, Tillmann Kubis +2
Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Universal Behavior of Strain in Quantum Dots
Hesameddin Ilatikhameneh, Tarek Ameen, Gerhard Klimeck +1
Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport
Hoon Ryu, Hong-Hyun Park, Mincheol Shin +2
Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires
Abhijeet Paul, Gerhard Klimeck
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
Atomistic and continuum modeling of a zincblende quantum dot heterostructure
Parijat Sengupta, Sunhee Lee, Sebastian Steiger +2
Engineering Nanowire n-MOSFETs at Lg < 8 nm
Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3
Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
Muhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu +4
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck +2
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan +5
Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport
Lang Zeng, Yu He, Michael Povolotsky +3
Electrically controlling single spin qubits in a continuous microwave field
Arne Laucht, Juha T. Muhonen, Fahd A. Mohiyaddin +12
Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass
Neophytos Neophytou, Gerhard Klimeck
Design Rules for High Performance Tunnel Transistors from 2D Materials
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
Performance degradation of superlattice MOSFETs due to scattering in the contacts
Pengyu Long, Jun Huang, Zhengping Jiang +3
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2
Design principles for HgTe based topological insulator devices
Parijat Sengupta, Tillmann Kubis, Yaohua Tan +2
Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
Neophytos Neophytou, Gerhard Klimeck, Hans Kosina
Mapping donor electron wave function deformations at sub-Bohr orbit resolution
Seung H. Park, Rajib Rahman, Gerhard Klimeck +1
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
SungGeun Kim, Abhijeet Paul, Mathieu Luisier +2
Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic +3
Atomistic modeling of the phonon dispersion and lattice properties of free-standing <100> Si nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2
Stark tuning of the charge states of a two-donor molecule in silicon
Rajib Rahman, Seung H. Park, Gerhard Klimeck +1
Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures
Parijat Sengupta, Tillmann Kubis, Yaohua Tan +1
Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
Zhengping Jiang, Neerav Kharche, Timothy Boykin +1
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Boundary conditions for the electronic structure of finite-extent, embedded semiconductor nanostructures
Seungwon Lee, Fabiano Oyafuso, Paul von Allmen +1