papers
Publications (14)
cond-mat.mes-hall2013
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
C. H. Yang, A. Rossi, R. Ruskov +7
cond-mat.mes-hall2005
A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry
G. Fiori, G. Iannaccone, G. Klimeck
cond-mat.mes-hall2011
New tools for the direct characterisation of FinFETs
G. C. Tettamanzi, A. Paul, S. Lee +2
cond-mat.mes-hall2011
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
cond-mat.mes-hall2011
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
cond-mat.mtrl-sci2015
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
K. Miao, S. Sadasivam, J. Charles +3
cond-mat.mes-hall2008
Valley splitting in Si quantum dots embedded in SiGe
S. Srinivasan, G. Klimeck, L. P. Rokhinson
cond-mat.mes-hall2015
Spatially Resolving Valley Quantum Interference of a Donor in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
cond-mat.mes-hall2011
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
cond-mat.mes-hall2016
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
cond-mat.mes-hall2015
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
J. A. Mol, J. Salfi, R. Rahman +5
cond-mat.mes-hall2009
Spin-orbit splittings in Si/SiGe quantum wells
M. Prada, G. Klimeck, R. Joynt
cond-mat.mes-hall2013
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi +8
cond-mat.mes-hall2011
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4