Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Wei-Chih Cheng, Minghao He, Siqi Lei +9

The paper demonstrates that adding a dual‑layer SiNx stressor (low‑stress padding plus high‑stress layer) to AlGaN/GaN HEMTs raises the threshold voltage by about 1 V and reduces o…