papers
Publications (14)
cond-mat.mtrl-sci2014
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas, M. den Hertog, Le Si Dang +2
cond-mat.mes-hall2015
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
cond-mat.mtrl-sci2018
Electrical and Optical Properties of Heavily Ge-Doped AlGaN
R. Blasco, A. Ajay, E. Robin +7
cond-mat.mes-hall2016
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7
cond-mat.mes-hall2015
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
C. B. Lim, A. Ajay, C. Bougerol +6
cond-mat.mtrl-sci2016
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
cond-mat.mtrl-sci2012
Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
F. González-Posada, R. Songmuang, M. Den Hertog +1
cond-mat.mtrl-sci2015
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
cond-mat.mes-hall2010
Quantum transport in GaN/AlN double-barrier heterostructure nanowires
R. Songmuang, G. Katsaros, E. Monroy +4
cond-mat.mes-hall2019
On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells
M. Jarema, M. Gladysiewicz, E. Zdanowicz +3
physics.ins-det2016
Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics
Luca Redaelli, Val Zwiller, E. Monroy +1
cond-mat.mtrl-sci2016
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
cond-mat.mes-hall2015
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions
C. B. Lim, M. Beeler, A. Ajay +4
cond-mat.mtrl-sci2017
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5