Controlling bulk conductivity in topological insulators: Key role of anti-site defects

D. O. Scanlon, P. D. C. King, R. P. Singh +5

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

J. Buckeridge, C. R. A. Catlow, D. O. Scanlon +6

Narrow-band anisotropic electronic structure of ReS$_2$

D. Biswas, A. M. Ganose, R. Yano +12

Antiferromagnetism at T > 500 K in the Layered Hexagonal Ruthenate SrRu2O6

C. I. Hiley, D. O. Scanlon, A. A. Sokol +9

Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb

J. Buckeridge, T. D. Veal, C. R. A. Catlow +1

The paper uses hybrid density functional theory with spin‑orbit coupling to calculate intrinsic point‑defect properties and dopability of the narrow‑gap semiconductors GaSb and InS…